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Browse Prior Art Database

Substrate Contact in a Trench Structure

IP.com Disclosure Number: IPCOM000044000D
Original Publication Date: 1984-Oct-01
Included in the Prior Art Database: 2005-Feb-05
Document File: 2 page(s) / 40K

Publishing Venue

IBM

Related People

El-Kareh, B: AUTHOR

Abstract

A process is provided for making a substrate contact along with a channel stop and a deep boron implant by the use of only a few steps. As indicated in Fig. 1, a P-type semiconductor substrate 10 has a layer of insulation, such as silicon dioxide, grown or deposited at the surface thereof. A segment 12 of the insulation layer is formed to define a substrate contact region 13 under segment 12. If desired, a thin layer of silicon dioxide 14 may be re-deposited or re-grown on substrate 10. Arsenic is then implanted with an energy that places the implanted arsenic peak concentration at about the surface of substrate 10 outside of segment 12, as indicated by dashed line 16, and with a dose that corresponds to the concentration of a standard subcollector region.

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Substrate Contact in a Trench Structure

A process is provided for making a substrate contact along with a channel stop and a deep boron implant by the use of only a few steps. As indicated in Fig. 1, a P-type semiconductor substrate 10 has a layer of insulation, such as silicon dioxide, grown or deposited at the surface thereof. A segment 12 of the insulation layer is formed to define a substrate contact region 13 under segment
12. If desired, a thin layer of silicon dioxide 14 may be re-deposited or re-grown on substrate 10. Arsenic is then implanted with an energy that places the implanted arsenic peak concentration at about the surface of substrate 10 outside of segment 12, as indicated by dashed line 16, and with a dose that corresponds to the concentration of a standard subcollector region. Segment 12 prevents the arsenic from entering into substrate 10 in the substrate contact region 13. Boron is now implanted at an energy that places the implanted boron peak concentration at the surface of the substrate 10 under segment 12 and with a dose of about 1014cm-2 . The peak of the boron concentration, as indicated by dotted line 18, outside of segment 12 is located about 0.5 micrometer below the arsenic peak concentration 16. The structure is dip-etched to remove all insulation material 12 and 14, as indicated in Fig. 2, an N-type epitaxial layer 28 of about 2 micro-meters is grown, and a trench 20 is formed in epitaxial layer 28 and substrate 10 at a location de...