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ENHANCEMENT OF TERPOLYMER RESIST R/Ro THROUGH RESIST FILM SURFACE TREATMENT

IP.com Disclosure Number: IPCOM000044010D
Original Publication Date: 1984-Oct-01
Included in the Prior Art Database: 2005-Feb-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Lee, LC: AUTHOR [+3]

Abstract

This article describes a process whereby the R/Ro of a terpolymer photoresist film is raised significantly by treatment with a metal ion solution. This increase in R/Ro is accompanied by a widening of the dry etch process window and the prevention of interlayer penetration in multilayer resist processes. Trace metal ions in the developer solution have been determined to be a cause of varying Ro . Undesirably low R/Ro in the terpolymer resist system is normally offset by stabilizing the effect of the metal ions by obtaining their removal from the developer through the use of a chelating agent. By use of resist surface treatment, the resist film Ro is virtually independent of the original material Ro, thereby simplifying manufacture of the polymer.

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ENHANCEMENT OF TERPOLYMER RESIST R/Ro THROUGH RESIST FILM SURFACE TREATMENT

This article describes a process whereby the R/Ro of a terpolymer photoresist film is raised significantly by treatment with a metal ion solution. This increase in R/Ro is accompanied by a widening of the dry etch process window and the prevention of interlayer penetration in multilayer resist processes. Trace metal ions in the developer solution have been determined to be a cause of varying Ro
. Undesirably low R/Ro in the terpolymer resist system is normally offset by stabilizing the effect of the metal ions by obtaining their removal from the developer through the use of a chelating agent. By use of resist surface treatment, the resist film Ro is virtually independent of the original material Ro, thereby simplifying manufacture of the polymer. With the process here disclosed, surface treatment of the terpolymer resist film layer proceeds through the mechanism of metal ion diffusion into the resist surface. A solution containing metal ions, for instance, 150 ppm of ferrous ion, is applied to the film surface, forming a chelating complex which results in effective cross-linking of the terpolymer resist surface through ionic chelating bonds. The cross-linked region is thin and weakly bonded, the thinning rate of exposed resist being significantly less decreased than that of the unexposed resist, which leads to a much higher R/Ro than that achievable by previously available means.

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