Dismiss
InnovationQ will be updated on Sunday, Oct. 22, from 10am ET - noon. You may experience brief service interruptions during that time.
Browse Prior Art Database

Process for Structuring a Submicron Mask

IP.com Disclosure Number: IPCOM000044030D
Original Publication Date: 1984-Oct-01
Included in the Prior Art Database: 2005-Feb-05
Document File: 2 page(s) / 42K

Publishing Venue

IBM

Related People

Trumpp, HJ: AUTHOR

Abstract

A positive mask with closed patterns and submicron dimensions, produced in sidewall technology, may be subdivided or structured in a photolithographic process and a dry or wet etch step. Also described is a structuring process, wherein the positive mask is simultaneously reversed to yield a negative mask having the original submicron dimensions. Fig. 1 shows a plasma-deposited nitride or oxide mask 3 with submicron dimensions, which is arranged on substrate 1, and an intermediate layer 2 that may consist of SiO2 or Si3N4 . A photoresist layer, covering mask 3, is spun onto substrate 1, 2. This layer is exposed and developed, yielding a structuring resist mask 4.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 91% of the total text.

Page 1 of 2

Process for Structuring a Submicron Mask

A positive mask with closed patterns and submicron dimensions, produced in sidewall technology, may be subdivided or structured in a photolithographic process and a dry or wet etch step. Also described is a structuring process, wherein the positive mask is simultaneously reversed to yield a negative mask having the original submicron dimensions. Fig. 1 shows a plasma-deposited nitride or oxide mask 3 with submicron dimensions, which is arranged on substrate 1, and an intermediate layer 2 that may consist of SiO2 or Si3N4 . A photoresist layer, covering mask 3, is spun onto substrate 1, 2. This layer is exposed and developed, yielding a structuring resist mask 4. If made of nitride, the portions of mask 3, not covered by mask 4, are removed with CF4 at low pressure and temperature, whereas, if made of oxide, they are removed by wet etching. Mask 4 is removed under comparable conditions by plasma etching with O2, yielding a structured mask 3 with submicron dimensions. For structuring and simultaneously reversing the positive mask to obtain a negative mask, as shown in Fig. 3, mask 4 (Fig. 1) is reactively ion etched with O2 such that the entire surface of mask 3, produced by sidewall technology, is bared. If made of nitride, mask 3 is completely removed by plasma etching with CF4 at low pressure and temperature or, if made of oxide, it is completely removed with buffered hydrofluoric acid, yielding a negative resist mask wit...