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Reactive Gas Mixtures for Plasma Hole Cleaning

IP.com Disclosure Number: IPCOM000044063D
Original Publication Date: 1984-Oct-01
Included in the Prior Art Database: 2005-Feb-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Bui, VQ: AUTHOR [+3]

Abstract

Plasma cleaning of through holes has been carried out using CF4 + O2 mixtures of different compositions. The fluorine-containing radicals initiate the break-up while oxygen scavenges the carbon and hydrogen, exposing new material for the fluorine-containing radicals. The glass pieces embedded in the hole walls cannot be completely removed by this particular combination of gases due to the non-volatile nature of the products of the etching of aluminum present in the fibers. Mixtures of O2 or O2 + Ar with NF3, CClF3, CCl2F2 and other fluoro chloro hydrocarbon and chlorine-containing gases are preferred for aluminum substrates. Obviously, care must be exercised with aluminum reactors. NF3 should be excellent because of the following reasons: 1. It contains no carbon, but still has 3 fluorine atoms for each molecule. 2.

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Reactive Gas Mixtures for Plasma Hole Cleaning

Plasma cleaning of through holes has been carried out using CF4 + O2 mixtures of different compositions. The fluorine-containing radicals initiate the break-up while oxygen scavenges the carbon and hydrogen, exposing new material for the fluorine-containing radicals. The glass pieces embedded in the hole walls cannot be completely removed by this particular combination of gases due to the non-volatile nature of the products of the etching of aluminum present in the fibers. Mixtures of O2 or O2 + Ar with NF3, CClF3, CCl2F2 and other fluoro chloro hydrocarbon and chlorine-containing gases are preferred for aluminum substrates. Obviously, care must be exercised with aluminum reactors. NF3 should be excellent because of the following reasons: 1. It contains no carbon, but still has 3 fluorine atoms for each molecule. 2. Nitrogen can combine with the carbon in the organics and can lead, in conjunction with fluorine-containing radicals, to enhanced etch rates. Thus, depending on the extent of glass to be etched and the reactor material, any of the above gases or their mixtures will be more appropriate than CF4 + O2 mixtures.

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