Browse Prior Art Database

Structure to Form N-Skin Under the Storage Node

IP.com Disclosure Number: IPCOM000044085D
Original Publication Date: 1984-Nov-01
Included in the Prior Art Database: 2005-Feb-05
Document File: 2 page(s) / 33K

Publishing Venue

IBM

Related People

Pan, PH: AUTHOR

Abstract

Smaller dynamic random-access memories (DRAMs) require a very thin insulator (or insulators) for the storage node. The total storage capacitance can be increased by the formation of an N-skin under the storage insulator. This article describes a method of adding a thin layer of silicon atop the storage electrode to allow high energy N-skin implants. After a layer of thin insulator(s) 11 is grown or deposited on the silicon substrate 12, a layer of thin Si 13 is then deposited, as shown in the cross-sectional view of Fig. 1. The thickness of the Si layer 13 will be adjusted to achieve the desired physical thickness (T). After applying the ion implantation 14, the electrode 15 is deposited (Fig. 2). The thin Si layer 13 will be converted into conducting Si for a poly Si 16 electrode (Fig.

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Structure to Form N-Skin Under the Storage Node

Smaller dynamic random-access memories (DRAMs) require a very thin insulator (or insulators) for the storage node. The total storage capacitance can be increased by the formation of an N-skin under the storage insulator. This article describes a method of adding a thin layer of silicon atop the storage electrode to allow high energy N-skin implants. After a layer of thin insulator(s) 11 is grown or deposited on the silicon substrate 12, a layer of thin Si 13 is then deposited, as shown in the cross-sectional view of Fig. 1. The thickness of the Si layer 13 will be adjusted to achieve the desired physical thickness (T). After applying the ion implantation 14, the electrode 15 is deposited (Fig. 2). The thin Si layer 13 will be converted into conducting Si for a poly Si 16 electrode (Fig. 3) or silicide 17 for a metal electrode 18 (Fig. 4) after the thermal anneal, resulting in the formation of the N-skin 19. The final structure is shown in Fig. 5.

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