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Transient Mode Soft Fail Emitter-Coupled Logic Bipolar Static Cell Test Site

IP.com Disclosure Number: IPCOM000044128D
Original Publication Date: 1984-Nov-01
Included in the Prior Art Database: 2005-Feb-05
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Voldman, SH: AUTHOR

Abstract

When an alpha particle tracks through a bipolar static cell, a soft error can occur if the charge storage at a given time is less than the charge collected. The carriers generated in the depletion region or in the funnel created by the alpha particle are collected in a subnanosecond time scale. Carriers generated in the quasi-neutral regions diffuse to the junction in a nanosecond time scale. An emitter-coupled logic (ECL) resistive loaded bipolar static cell (Fig. 1) can be used as a tool to determine what percentage of the charge collection is due to a drift-funnel collection versus diffusion collection by designing the cell to be insensitive in the standby mode and sensitive in a transient mode of operation.

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Transient Mode Soft Fail Emitter-Coupled Logic Bipolar Static Cell Test Site

When an alpha particle tracks through a bipolar static cell, a soft error can occur if the charge storage at a given time is less than the charge collected. The carriers generated in the depletion region or in the funnel created by the alpha particle are collected in a subnanosecond time scale. Carriers generated in the quasi-neutral regions diffuse to the junction in a nanosecond time scale. An emitter-coupled logic (ECL) resistive loaded bipolar static cell (Fig. 1) can be used as a tool to determine what percentage of the charge collection is due to a drift-funnel collection versus diffusion collection by designing the cell to be insensitive in the standby mode and sensitive in a transient mode of operation. To eliminate soft errors in the standby mode, the standby, Q critical (QCRIT-the amount of charge needed to flip the cell when a charge source is applied collector to collector) has to be much greater than the charge collected. This is achieved by a high base-collector capacitance and high isolation capacitance (0.2 - 0.4 pF). By maximizing the isolation capacitance, the offset voltage loss is increased, decreasing the charge storage in the transient state.

By minimizing the charge storage on the Schottky diode and optimizing the punch resistor value, the waveform of the voltage offset can be tailored to have a large offset loss in the full selected state so that the cell is only...