Browse Prior Art Database

Method of Producing Thin Layers by Simultaneously Implanting Atomic and Molecular Ions

IP.com Disclosure Number: IPCOM000044143D
Original Publication Date: 1984-Nov-01
Included in the Prior Art Database: 2005-Feb-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Hinkel, H: AUTHOR [+3]

Abstract

The stoichiometric composition of thin layers produced in a solid by ion implantation is determined by the sputter yield S. For suitably tailoring this composition, the experimental result is used that molecular ions have a higher sputter yield S2 per atom than atomic ions S1 . If molecular ions A+2 and atomic ions A+ are simultaneously implanted in the solid, the resultant sputter yield and thus the resultant concentration of the substance A in the solid is determined by the ion current ratio j(A+)/j(A+2). If, for example, Te+ (E = 150 keV) with S1 = 3 and Te+ 2 (E = 300 keV) with S2 = 4 are simultaneously implanted in a silicon crystal, a stoichiometric relationship of between 0.25 and 0.33 can be selectively adjusted. The method can also be used for other ions and crystals.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Method of Producing Thin Layers by Simultaneously Implanting Atomic and Molecular Ions

The stoichiometric composition of thin layers produced in a solid by ion implantation is determined by the sputter yield S. For suitably tailoring this composition, the experimental result is used that molecular ions have a higher sputter yield S2 per atom than atomic ions S1 . If molecular ions A+2 and atomic ions A+ are simultaneously implanted in the solid, the resultant sputter yield and thus the resultant concentration of the substance A in the solid is determined by the ion current ratio j(A+)/j(A+2). If, for example, Te+ (E = 150 keV) with S1 = 3 and Te+ 2 (E = 300 keV) with S2 = 4 are simultaneously implanted in a silicon crystal, a stoichiometric relationship of between 0.25 and 0.33 can be selectively adjusted. The method can also be used for other ions and crystals. Compared with the prior art, the above-described method has the advantage that there is a perpendicular beam incidence and that there is no contamination resulting from an additional "trimming" ion beam.

1