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2% Silane, Helium-Based Polysilicon Process in a Low Pressure Vapor Deposition Tool

IP.com Disclosure Number: IPCOM000044165D
Original Publication Date: 1984-Nov-01
Included in the Prior Art Database: 2005-Feb-05
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Frey, WJ: AUTHOR [+2]

Abstract

This article describes a low pressure chemical vapor deposition (LPCVD) doped polysilicon process which uses 2% silane and boron trichloride in a helium carrier gas. The process eliminates the pyroforic situation caused by the use of 100% silane and hydrogen gas in the deposition of polysilicon. By using helium as a carrier gas, tube pressure is increased to 1.000 torr, as shown below, and total reactant and carrier flows are increased to 2.500 liters per minute. With this technique, it is possible to deposit a 3000 ˜ boron doped polysilicon film in a manufacturable process of approximately 75 ˜ per minute in a non-explosive atmosphere. Proposed Process 100% Silane 50 cc 1% BCl3 in He 43 cc He Carrier 2188 cc He Diluent 200 cc Pressure 1.000 torr Deposit Time 42:00 min.

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2% Silane, Helium-Based Polysilicon Process in a Low Pressure Vapor Deposition Tool

This article describes a low pressure chemical vapor deposition (LPCVD) doped polysilicon process which uses 2% silane and boron trichloride in a helium carrier gas. The process eliminates the pyroforic situation caused by the use of 100% silane and hydrogen gas in the deposition of polysilicon. By using helium as a carrier gas, tube pressure is increased to 1.000 torr, as shown below, and total reactant and carrier flows are increased to 2.500 liters per minute. With this technique, it is possible to deposit a 3000 ~ boron doped polysilicon film in a manufacturable process of approximately 75 ~ per minute in a non-explosive atmosphere. Proposed Process 100% Silane 50 cc 1% BCl3 in He 43 cc He Carrier 2188 cc He Diluent 200 cc Pressure 1.000 torr Deposit Time 42:00 min.

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