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Improved Dielectric Coating Method for the Fabrication of Coaxial Transmission Line to Be Used for the Test of VLSI Devices

IP.com Disclosure Number: IPCOM000044243D
Original Publication Date: 1984-Nov-01
Included in the Prior Art Database: 2005-Feb-05
Document File: 2 page(s) / 30K

Publishing Venue

IBM

Related People

Bojarczuk, NA: AUTHOR [+2]

Abstract

Older test probe designs which include flexible probes and solid wire conductors to test current semiconductor devices cannot test the future generations of VLSI products because of their glossy structure. The fabrication of low loss coaxial transmission lines require a low resistance central conductor usually made of Cu, Au or Ag or a combination of these metals. In certain applications the dielectric coating surrounding the conductor should be as high as possible. This generally requires a refractory metal oxide which is normally produced by processes at elevated temperatures. These elevated temperatures cause the migration of the center wire metallurgy into the oxide, destroying its electrical properties and ruining the transmission line characteristics.

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Improved Dielectric Coating Method for the Fabrication of Coaxial Transmission Line to Be Used for the Test of VLSI Devices

Older test probe designs which include flexible probes and solid wire conductors to test current semiconductor devices cannot test the future generations of VLSI products because of their glossy structure. The fabrication of low loss coaxial transmission lines require a low resistance central conductor usually made of Cu, Au or Ag or a combination of these metals. In certain applications the dielectric coating surrounding the conductor should be as high as possible. This generally requires a refractory metal oxide which is normally produced by processes at elevated temperatures. These elevated temperatures cause the migration of the center wire metallurgy into the oxide, destroying its electrical properties and ruining the transmission line characteristics. There is, therefore, an urgent need to design improved coaxial lines having low transmission losses in order to provide correct electrical signals from the device under test to the tester. The present disclosure offers a process which eliminates such deleterious migration effects and keeps the transmission line structure intact. The process includes the steps of first depositing a thin layer of the dielectric-based metal, in this embodiment tantalum, on the center wire, then depositing the dielectric tantalum pentoxide (Ta2O5) on that film, then depositing another thin tantalum layer on t...