Browse Prior Art Database

GaAs-GaAlAs COMPOUND SEMICONDUCOR STRUCTURE

IP.com Disclosure Number: IPCOM000044275D
Original Publication Date: 1984-Nov-01
Included in the Prior Art Database: 2005-Feb-05
Document File: 2 page(s) / 45K

Publishing Venue

IBM

Related People

Kirchner, PD: AUTHOR [+4]

Abstract

An inverted high electron mobility transistor (HEMT) is provided in which an undoped GaAs layer is positioned adjacent the surface and is spaced from an n+ GaAlAs layer by an undoped GaAlAs layer. The structure is shown in Fig. 1, and the band diagram is shown in Fig. 2. The structure facilitates formation of an ohmic contact to the two-dimensional electron gas region (2-DEG), permits gate to 2-DEG region spacing to be larger, and avoids parasitic conductance resulting from carrier trapping in an n+ GaAlAs surface layer.

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GaAs-GaAlAs COMPOUND SEMICONDUCOR STRUCTURE

An inverted high electron mobility transistor (HEMT) is provided in which an undoped GaAs layer is positioned adjacent the surface and is spaced from an n+ GaAlAs layer by an undoped GaAlAs layer. The structure is shown in Fig. 1, and the band diagram is shown in Fig. 2. The structure facilitates formation of an ohmic contact to the two-dimensional electron gas region (2-DEG), permits gate to 2-DEG region spacing to be larger, and avoids parasitic conductance resulting from carrier trapping in an n+ GaAlAs surface layer.

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