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Browse Prior Art Database

Planar Quartz-Polysiloxane Composite Insulator

IP.com Disclosure Number: IPCOM000044548D
Original Publication Date: 1984-Dec-01
Included in the Prior Art Database: 2005-Feb-06
Document File: 2 page(s) / 65K

Publishing Venue

IBM

Related People

Flitsch, F: AUTHOR [+3]

Abstract

This article describes the use of a spun-on polysiloxane resin as part of a composite insulator between two metal layers on a semiconductor chip. Planarized quartz is a commonly used insulator between metal layers on semiconductor device chips. In some cases, it is unable to completely cover protrusions or spikes from the first metal surface. These spikes can result in yield losses and early life failures due to interlevel shorts between these metal layers. To overcome this, a composite insulating layer of quartz and polysiloxane is used. Sputtered quartz is deposited over the patterned first metal layer of, for example, aluminum copper. A layer of polysiloxane resin is then applied using conventional photoresist application techniques, such as spinning. The polysiloxane is then baked at a temperature of greater than 200ŒC.

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Planar Quartz-Polysiloxane Composite Insulator

This article describes the use of a spun-on polysiloxane resin as part of a composite insulator between two metal layers on a semiconductor chip. Planarized quartz is a commonly used insulator between metal layers on semiconductor device chips. In some cases, it is unable to completely cover protrusions or spikes from the first metal surface. These spikes can result in yield losses and early life failures due to interlevel shorts between these metal layers. To overcome this, a composite insulating layer of quartz and polysiloxane is used. Sputtered quartz is deposited over the patterned first metal layer of, for example, aluminum copper. A layer of polysiloxane resin is then applied using conventional photoresist application techniques, such as spinning. The polysiloxane is then baked at a temperature of greater than 200OEC. This converts the polysiloxane largely to silicon dioxide. This composite layer is then patterned using conventional photolithography techniques and etched using standard reactive ion etching techniques with carbon tetrafluoride as the reactive gas. The top metal layer is then deposited and patterned. This process also has a leveling effect on the topography of the wafer surface.

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