Browse Prior Art Database

Hybrid Resist Process for Producing High Quality and High Density Reactive Ion Etch Masks Made by Electron Beam Lithography

IP.com Disclosure Number: IPCOM000044586D
Original Publication Date: 1984-Dec-01
Included in the Prior Art Database: 2005-Feb-06
Document File: 2 page(s) / 53K

Publishing Venue

IBM

Related People

Bucchignano, JJ: AUTHOR [+2]

Abstract

A two-step electron beam exposure process is described for reducing the bad effects of electron beam scattering on edge definition in mask fabrication. First, the desired final mask pattern is divided into two separate complementary mask patterns. A simple final pattern will be used to describe the basic steps. Assume we are to create an RIE (reactive ion etch) mask for the etching of SiO2 on silicon. It will be assumed that the final pattern consists of the three rectangles shown in ROW I of the figure. Two complementary electron beam masks are generated from the layout. All rectangles greater than or equal to, say, 3.0 microns are partitioned into inside and outside shapes.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 53% of the total text.

Page 1 of 2

Hybrid Resist Process for Producing High Quality and High Density Reactive Ion Etch Masks Made by Electron Beam Lithography

A two-step electron beam exposure process is described for reducing the bad effects of electron beam scattering on edge definition in mask fabrication. First, the desired final mask pattern is divided into two separate complementary mask patterns. A simple final pattern will be used to describe the basic steps. Assume we are to create an RIE (reactive ion etch) mask for the etching of SiO2 on silicon. It will be assumed that the final pattern consists of the three rectangles shown in ROW I of the figure. Two complementary electron beam masks are generated from the layout. All rectangles greater than or equal to, say, 3.0 microns are partitioned into inside and outside shapes. The outside shapes, along with shapes not big enough to be partitioned, are combined to form a first electron beam exposure pattern which will be used to expose areas in a resist layer. This pattern is shown as shaded regions in ROW II. The second electron beam exposure pattern is composed of only the remaining inside shapes of the total pattern and will be used to expose the pattern shown in ROW III. Because of overlay and registration errors, the two complementary exposure patterns are designed so that they overlap by an amount which accounts for such errors. The RIE etch mask is built in two steps. First, using preferably a terpolymer-pmma double layer resist process...