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Removal of the Metal Oxide Layer From a Metal by Laser-Assisted Hydrogen Reduction

IP.com Disclosure Number: IPCOM000044627D
Original Publication Date: 1984-Dec-01
Included in the Prior Art Database: 2005-Feb-06
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Burns, FC: AUTHOR [+2]

Abstract

By using a laser as a heat source, an oxide layer that is present on metals can be removed through hydrogen reduction. The basic equation for the reduction is: MxOy + YH2 z XM + YH2O Since the adsorptivity and thermal stability of the oxide will vary with the metal, a different frequency and power dosage will be required for different metals. By using a laser, projection techniques can be employed to remove the oxide in specific, well-defined areas, while those areas not exposed to the laser remain unaffected. This technique can be adopted and adapted to in situ treatment processes and can be used wherever metal oxide removal is desired, such as in preparing a metal for soldering. In addition, this technique can be used to remove oxides from semiconductors, such as SiO2 from Si.

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Removal of the Metal Oxide Layer From a Metal by Laser-Assisted Hydrogen Reduction

By using a laser as a heat source, an oxide layer that is present on metals can be removed through hydrogen reduction. The basic equation for the reduction is: MxOy + YH2 z XM + YH2O Since the adsorptivity and thermal stability of the oxide will vary with the metal, a different frequency and power dosage will be required for different metals. By using a laser, projection techniques can be employed to remove the oxide in specific, well-defined areas, while those areas not exposed to the laser remain unaffected. This technique can be adopted and adapted to in situ treatment processes and can be used wherever metal oxide removal is desired, such as in preparing a metal for soldering. In addition, this technique can be used to remove oxides from semiconductors, such as SiO2 from Si.

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