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2% Silane Plasma Enhanced CVD Dielectric Films

IP.com Disclosure Number: IPCOM000044692D
Original Publication Date: 1984-Feb-01
Included in the Prior Art Database: 2005-Feb-06
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Gallagher, JP: AUTHOR [+2]

Abstract

Silane (SIH4) is diluted with a carrier gas or gaseous mixture to less than 2% to avoid the cumbersome and costly safety precautions required for higher percentages of SiH4 .

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2% Silane Plasma Enhanced CVD Dielectric Films

Silane (SIH4) is diluted with a carrier gas or gaseous mixture to less than 2% to avoid the cumbersome and costly safety precautions required for higher percentages of SiH4 .

Dilution may be with or without NH3, depending upon the end application of the films to be fabricated.

Plasma enhanced chemical vapor depositon (PE/CVD) of dielectrics including silicon nitride, silicon oxide, silicon oxynitride and dielectrics with various dopants generally use 100% silane or lower concentrations of silane as the silicon source. Because of its pyrophoric nature, silicon nitride concentrations above 2% require elaborate safety precautions in order to minimize explosion or fire conditions. This type of installation in a production line environment creates problems in process flow, floor space and time schedule requirements. Disclosed here is a process which uses 1.9% SiH4 in nitrogen. However, SiH4 in argon or helium will also work. The film is deposited in a conventional glow discharge system converted from a 100% SiH4 to a less than 2% SiH4 process machine. Nitride films obtained with this process are silicon deficient and show high insulating characteristics with good stability.

In addition to insulating films, the process with appropriate modification of parameters, may also be used to produce films as a transient medium for lift-off process purposes. To form a lift-off film, NH3 is deleted and the process temperature is lowe...