Browse Prior Art Database

Nitride Defined Schottky Barrier Diodes

IP.com Disclosure Number: IPCOM000044694D
Original Publication Date: 1984-Mar-01
Included in the Prior Art Database: 2005-Feb-06
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Kim, SU: AUTHOR

Abstract

This discloses a novel Schottky barrier diode which can be defined using a silicon nitride layer which eliminates the possibility of contamination trapping in the device.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 57% of the total text.

Page 1 of 1

Nitride Defined Schottky Barrier Diodes

This discloses a novel Schottky barrier diode which can be defined using a silicon nitride layer which eliminates the possibility of contamination trapping in the device.

At the present time, Schottky barrier devices are formed by starting with a silicon body which has been oxidized and the oxide layer is in turn coated with a silicon nitride layer so that the nitride can be used as a masking agent to form an opening in the underlying silicon oxide to permit a Schottky barrier defining material to be placed in contact with a limited area of the silicon body. These devices, until the present, have had undesirable features due to the fact that the etching rates of the silicon oxide and the silicon nitride are different resulting in leaving a slight overhang of silicon nitride i.e., an undercutting of the oxide. When the Schottky barrier forming material is placed in such an undercut opening a slight void is left around the Schottky barrier forming material that can trap various contaminants such as acid residues, moisture and the like, resulting in instabilities in the finished diode, and causing reliability problems.

The following process eliminates such a void in such devices and consists of the following steps. A silicon body is oxidized and coated with a silicon nitride layer, in exactly the same manner as presently employed. A opening is defined in the silicon nitride and the underlying oxide etched therefrom, resulting...