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Photoetching with 157 nm Photons

IP.com Disclosure Number: IPCOM000044706D
Original Publication Date: 1984-Apr-01
Included in the Prior Art Database: 2005-Feb-06
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Jain, K: AUTHOR [+3]

Abstract

One hundred fifty-seven nm photons from a fluorine laser can accomplish photoetching. This is a molecular fluorine laser excited by an electric discharge in a mixture of He and F2 or He, F2 and Ne. Photoetching with this source in PMMA (polymethylmethacrylate) and AZ1350 photoresist has been observed. Further experiments on polyimide, Mylar etc. are in progress. With the 7.9 eV photons, many higher energy bonds can be broken and thus, more new materials can be photoetched. Examples of bonds which cannot be broken with the 193 nm ArF laser but can be with the 157 nm fluorine laser include H-F, C-S, N-O, O-Sc, O-Ti, O-V, O-Ge, O-W, etc. In addition to being useful for etching new materials, the shorter wavelength is useful high-resolution etching.

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Photoetching with 157 nm Photons

One hundred fifty-seven nm photons from a fluorine laser can accomplish photoetching. This is a molecular fluorine laser excited by an electric discharge in a mixture of He and F2 or He, F2 and Ne. Photoetching with this source in PMMA (polymethylmethacrylate) and AZ1350 photoresist has been observed. Further experiments on polyimide, Mylar etc. are in progress. With the 7.9 eV photons, many higher energy bonds can be broken and thus, more new materials can be photoetched. Examples of bonds which cannot be broken with the 193 nm ArF laser but can be with the 157 nm fluorine laser include H-F, C-S, N-O, O- Sc, O-Ti, O-V, O-Ge, O-W, etc. In addition to being useful for etching new materials, the shorter wavelength is useful high-resolution etching.

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