Browse Prior Art Database

Capping Layer for Magneto-Resistive Sensor

IP.com Disclosure Number: IPCOM000044708D
Original Publication Date: 1984-Apr-01
Included in the Prior Art Database: 2005-Feb-06
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Toxen, AM: AUTHOR

Abstract

A capping layer is described for a magneto-resistive sensor which comprises b-tantalum.

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Capping Layer for Magneto-Resistive Sensor

A capping layer is described for a magneto-resistive sensor which comprises b-tantalum.

Some of the materials used in the fabrication of magneto-resistive sensors are somewhat sensitive to oxidation and corrosion during processing. These materials can result in degradation and non-uniformity of performance of the magneto-resistive devices.

An improved design has deposited on the sensor a "capping" layer of a high resistance, corrosion resistant material to avoid these problems. One suitable material is b-phase tantalum which can be sputter-deposited. The b-tantalum has a resistivity of about 200 micro-ohm-cm so that almost no shunting of the sensor occurs. The b-tantalum is highly resistant to corrosion and protects the sensor from chemical attack. The tantalum also provides a surface from which the photoresist used in processing can be easily stripped.

Disclosed anonymously

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