Browse Prior Art Database

High Resistance Separation Layers

IP.com Disclosure Number: IPCOM000044709D
Original Publication Date: 1984-Apr-01
Included in the Prior Art Database: 2005-Feb-06
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Toxen, AM: AUTHOR

Abstract

A magneto-resistive sensor of improved sensitivity is produced by the use of a high resistance separation layer comprising b-tantalum.

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High Resistance Separation Layers

A magneto-resistive sensor of improved sensitivity is produced by the use of a high resistance separation layer comprising b-tantalum.

In the fabrication of magneto-resistive sensors, it is sometimes necessary to have a spacer layer which has relatively high resistance but is not insulating. One example is the soft film shunt biased sensor where it is necessary to separate the soft film from the sensor layer. This separation layer should have high resistance so that not too much current is shunted through it, but it must be conductive enough so that good electrical contact to the magneto-resistive layer is maintained.

A very good material for the separation layer is b-tantalum which has the desirable properties of high resistivity (about 200 micro-ohm-cm), good adhesion to contiguous layers and excellent corrosion resistance. In addition, the b- tantalum has low interdiffusion with Ni and Fe based alloys.

Disclosed anonymously

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