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Deposition of Graded Oxides

IP.com Disclosure Number: IPCOM000044845D
Original Publication Date: 1984-Nov-01
Included in the Prior Art Database: 2005-Feb-06
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Kroll, CT: AUTHOR

Abstract

An improved method for depositing graded band gap oxides is disclosed. The method uses the plasma enhanced CVD technique to produce the graded band oxide, wherein the deposition is carried out at relatively low temperatures, i.e., equal to or less than 350 degrees Centigrade.

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Deposition of Graded Oxides

An improved method for depositing graded band gap oxides is disclosed. The method uses the plasma enhanced CVD technique to produce the graded band oxide, wherein the deposition is carried out at relatively low temperatures,
i.e., equal to or less than 350 degrees Centigrade.

The substrate of the plasma deposition apparatus in which the process is carried out is maintained at a temperature of 350OE C. The RF power level of the plasma deposition apparatus is equal to l25 watts. The growth rate of the oxide within the apparatus is approximately 600 Angstroms per minute.

The deposition is initiated by introducing silane, oxygen, and argon as a carrier into the plasma deposition apparatus. After stabilizing the flows of these gases, an RF glow is initiated and 60 Angstroms of oxide is deposited. While the silane and argon flow rates are held constant, the oxygen flow rate is cut in half and an additional 60 Angstroms is deposited. Finally, the oxygen is turned completely off and the remainder of the deposition is carried out. This latter deposition produces a silicon rich layer. The oxide layer that results using this deposition method is a graded one, having a pure oxide composition in the bottom layer and having a very silicon rich oxide composition at the top layer.

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