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Projection Printing and Scanning Electron Lithography with Low Energy Electrons

IP.com Disclosure Number: IPCOM000044887D
Original Publication Date: 1984-Dec-01
Included in the Prior Art Database: 2005-Feb-06
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Hiraoka, H: AUTHOR

Abstract

Through a proximity printing mask, low energy electrons in a range of 800 eV to 1000 eV were showered onto organic polymer films with very thin oxygen etch barrier layers such as plasma deposited tetravinylsilane. The exposed polymer films were subjected to an oxygen reactive ion etching, of course without a mask, for image development. In this way very high resolution polymer patterns up to 0.3 micron with film thicknesses over 1 micron were fabricated with polymers from poly (methylmethacrylate) to polyimides. The images obtained were in positive tone.

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Projection Printing and Scanning Electron Lithography with Low Energy Electrons

Through a proximity printing mask, low energy electrons in a range of 800 eV to 1000 eV were showered onto organic polymer films with very thin oxygen etch barrier layers such as plasma deposited tetravinylsilane. The exposed polymer films were subjected to an oxygen reactive ion etching, of course without a mask, for image development. In this way very high resolution polymer patterns up to
0.3 micron with film thicknesses over 1 micron were fabricated with polymers from poly (methylmethacrylate) to polyimides. The images obtained were in positive tone.

With organic silicon or tin compounds deposited as a thin (150 to 250 AOE) oxygen etch barrier layer, the electron penetration depth of sub-keV energy was limited to a few hundred Angstroms, while 5 KeV electron deposited energy far more deep inside the films, ca 5000 AOE; thus the oxygen etch barrier layers are relatively undamaged. The 5 keV scanning electron beams leave a "cave" after the oxygen development, while 800 eV electrons developed images completely in oxygen RIE development.

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