Browse Prior Art Database

Thick Oxide Radiation Monitor Device

IP.com Disclosure Number: IPCOM000044899D
Original Publication Date: 1983-Jan-01
Included in the Prior Art Database: 2005-Feb-06
Document File: 2 page(s) / 82K

Publishing Venue

IBM

Related People

Stephens, TV: AUTHOR

Abstract

A thick oxide ionizing radiation monitoring device is disclosed which monitors the quantity of charge produced by ionizing radiation absorbed in the thick oxide region of the semiconductor device when radiated by an external source of radiation.

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Thick Oxide Radiation Monitor Device

A thick oxide ionizing radiation monitoring device is disclosed which monitors the quantity of charge produced by ionizing radiation absorbed in the thick oxide region of the semiconductor device when radiated by an external source of radiation.

Fig. 1 is a view of the layout of the device, and Fig. 2 is a cross-sectional view of the device along the section line 2-2' of Fig. 1. A silicon substrate 1 has formed in it a source diffusion 2 and a drain diffusion 3 having a sinuous pattern, as shown in Fig. 1. A thick layer of silicon dioxide 4, having a thickness on the order of 2 microns, is applied to the surface of the semiconductor substrate 1. On top of the silicon dioxide layer 4 is applied a gate electrode 5 which can be formed of polycrystalline silicon. The gate electrode 5 covers the channel region between the source 2 and drain 3, and has the sinuous pattern shown in Fig. 1.

When ionizing radiation, such as X-rays or gamma rays is incident on the device shown in Figs. 1 and 2, the radiation will undergo photoelectric effect, Compton effect, or electron positron interactions in the silicon dioxide layer 4, thereby producing negative electrons and positive holes in the silicon dioxide layer 4. Because of its relatively large thickness, the silicon dioxide layer 4 has an enhanced probability of absorbing a significant portion of the radiation incident thereon, and is therefore quite sensitive to low levels of ionizing rad...