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Matrix Addressed Electrochromic Display Device with Short Circuit Memory

IP.com Disclosure Number: IPCOM000044968D
Original Publication Date: 1983-Jan-01
Included in the Prior Art Database: 2005-Feb-06
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Kaufman, FB: AUTHOR

Abstract

Recently the importance of short-circuit memory in achieving intrinsic matrix addressability for electrochromic materials has been discussed (1,2,3). In addition, short-circuit memory has been achieved using a tantalum-oxide hysteretic counterelectrode (3). This article will describe another approach to achieving short-circuit memory using a two-layered working electrode employing polymer electrochromic materials (4,5). Murray et al. have recently described (6,7) the i-v characteristics of a series of bilayer electrodes constructed by coating metal electrodes with two different electroactive polymers, one on top of the other.

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Matrix Addressed Electrochromic Display Device with Short Circuit Memory

Recently the importance of short-circuit memory in achieving intrinsic matrix addressability for electrochromic materials has been discussed (1,2,3). In addition, short-circuit memory has been achieved using a tantalum-oxide hysteretic counterelectrode (3). This article will describe another approach to achieving short-circuit memory using a two-layered working electrode employing polymer electrochromic materials (4,5). Murray et al. have recently described (6,7) the i-v characteristics of a series of bilayer electrodes constructed by coating metal electrodes with two different electroactive polymers, one on top of the other. The hysteretic nature of the i-v characteristic plus the authors' demonstration of pinhole-free polymer layer application (which maintains the integrity of the inner and outer layers) suggests the use of a bilayer system of this kind as an electrochromic display device with short-circuit memory. A display device with utility in a matrix-addressing scheme can be envisaged as follows: Bilayer picture elements are fabricated by depositing a thin inner gating polymer layer with peak redox potentials at E/I/(i) and E/2/(i)(E/2/(i) greater than and equal to E/I/(i). A second thicker layer, which is electrochromic, is then deposited with writing potential at E(o)(E/I/(i) less than or equal to E/2/(i) less than E).

The simplest manifestation of a short circuit memory characteri...