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Selective Etch for Delineation of Shallow Junctions

IP.com Disclosure Number: IPCOM000045062D
Original Publication Date: 1983-Jan-01
Included in the Prior Art Database: 2005-Feb-06
Document File: 2 page(s) / 44K

Publishing Venue

IBM

Related People

Schwuttke, GH: AUTHOR [+2]

Abstract

Cross-sectional transmission electron microscopy (TEM) can be used to measure the depth of shallow junctions with high resolution and excellent accuracy. The measurement requires that the junction be first delineated by a selective etch. The etch consists of five parts of 1 molal CrO(3) and 1 part of 49% HF. Delineation of the shallow junctions is carried out by dipping cross-sectioned TEM samples into the etch for a period of 7-12 seconds. The etch rate of this etch is slow and strongly dependent on dopant concentration. This property makes this etch very useful for delineating shallow junctions, as required for cross-sectional TEM investigation.

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Selective Etch for Delineation of Shallow Junctions

Cross-sectional transmission electron microscopy (TEM) can be used to measure the depth of shallow junctions with high resolution and excellent accuracy. The measurement requires that the junction be first delineated by a selective etch. The etch consists of five parts of 1 molal CrO(3) and 1 part of 49% HF. Delineation of the shallow junctions is carried out by dipping cross- sectioned TEM samples into the etch for a period of 7-12 seconds. The etch rate of this etch is slow and strongly dependent on dopant concentration. This property makes this etch very useful for delineating shallow junctions, as required for cross-sectional TEM investigation.

As shown in the figure, a n/+/p junction is well delineated after 9 seconds of etching in the etch described. The junction is well defined. The junction depth is measured as 526 +/- 13 Angstrom.

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