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Method for Concentration Profiles and Surface Coverage Determination by Synchronization of Pulsed Ion and Laser Beams

IP.com Disclosure Number: IPCOM000045130D
Original Publication Date: 1983-Feb-01
Included in the Prior Art Database: 2005-Feb-06
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Elbern, AW: AUTHOR [+2]

Abstract

A method for determining concentration profiles of thin films uses a pulsed ion beam that is synchronized with a dye-laser in an optical system where sputtered atoms are produced and detected. As shown in the drawing, a pulsed ion beam 10 from a pulsed ion-beam gun (not shown) is directed at a target 12 to cause sputtering erosion of the target surface. The beam 10 is synchronized with a laser beam 14 from a flash lamp pulsed dye laser (not shown). A conventional optical detection system 16 detects the sputtered atoms 18 by fluorescence spectroscopy. The target erosion depth should be produced with high current and short ion beam pulse.

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Method for Concentration Profiles and Surface Coverage Determination by Synchronization of Pulsed Ion and Laser Beams

A method for determining concentration profiles of thin films uses a pulsed ion beam that is synchronized with a dye-laser in an optical system where sputtered atoms are produced and detected. As shown in the drawing, a pulsed ion beam 10 from a pulsed ion-beam gun (not shown) is directed at a target 12 to cause sputtering erosion of the target surface. The beam 10 is synchronized with a laser beam 14 from a flash lamp pulsed dye laser (not shown). A conventional optical detection system 16 detects the sputtered atoms 18 by fluorescence spectroscopy. The target erosion depth should be produced with high current and short ion beam pulse. This method, which is independent of matrix effects, can be used to determine very low surface concentrations in the order of 10 to 10 monolayers and also low atomic impurity concentrations in the order of ppb.

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