Browse Prior Art Database

Telfon Polymer Mask for RIE of Contact Holes

IP.com Disclosure Number: IPCOM000045141D
Original Publication Date: 1983-Feb-01
Included in the Prior Art Database: 2005-Feb-06
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Ephrath, LM: AUTHOR

Abstract

This publication describes a technique which overcomes the problem of thermal degradation of resist during the RIE (reactive ion etching) of contact holes due to poor adhesion of resist or a high flux of energetic etching specie.

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Telfon Polymer Mask for RIE of Contact Holes

This publication describes a technique which overcomes the problem of thermal degradation of resist during the RIE (reactive ion etching) of contact holes due to poor adhesion of resist or a high flux of energetic etching specie.

Thermal stability of resist depends in a sensitive way on the adhesion of resist to the substrates. Even slight flow or reticulation of resist reduces the area of small contact hole openings by an unacceptable amount. Problems related to thermal stability of resist will probably become unmanageable if the economics of wafer processing dictate the use of high etch rate single wafer etchers because the high etch rates require a high flux of energetic etching specie.

The approach disclosed here is to replace the resist etch mask for SiO(2) and Si(3)N(4) with a thin conformal film of TEFLON (Trademark of E. I. du Pont de Nemours & Co). polymer. The procedure is as follows: 1. Deposit on the SiO(2) or Si(3)N(4) (or composite) layer 10 (approx.1000 Angstroms) conformal film 12 of polymer, as

shown in Fig. 1. A TEFLON-like polymer with a low pin-hole

density can be deposited from a CF(4)+H(2) plasma. 2. Then expose and develop the appropriate pattern in a resist layer 14. Transfer the pattern into the polymer film

12 using a short, low power etch by RIE in CF(4) or O(2),

as shown in Fig. 2. 3. Strip the resist in solvents, as shown in Fig. 3. Solvents do not attack the polymer film. 4. Use the patter...