Browse Prior Art Database

Current Limiting Resistor

IP.com Disclosure Number: IPCOM000045147D
Original Publication Date: 1983-Feb-01
Included in the Prior Art Database: 2005-Feb-06
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Feth, GC: AUTHOR

Abstract

This article relates to resistive elements for use with semiconductor devices and more particularly to current-limiting resistors which are integral with a semiconductor substrate and are vertically arranged.

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Current Limiting Resistor

This article relates to resistive elements for use with semiconductor devices and more particularly to current-limiting resistors which are integral with a semiconductor substrate and are vertically arranged.

The above figure shows a semiconductor substrate 1 of silicon or other suitable material in which a pair of deep trench oxide regions 2 have been formed. A region 3 of recessed oxide (ROX) is shown disposed between regions
2. Substrate 1, which is of p- conductivity type, has an n region 4 formed between regions 2 and extending to the surface of substrate 1 between region 3 and the left hand deep trench oxide region 2. An epitaxial region 5 of n conductivity type extends from a portion of region 4 between ROX region 3 and the right hand deep trench oxide region 2 to a point which is level with the tops of regions 2 and 3. An optional n+ doped region 6 may be formed at the top of region 5. A contact 7 of aluminum is connected to region 5 via an n+ poly layer 8, while another contact 9 of aluminum is connected to the top of region 4, which extends between left hand oxide region 2 and ROX region 3.

In the arrangement shown, n+ region 4 is a subcollector region which acts as one electrode to epitaxial region 5, which is the vertically arranged current limiting resistor. Poly layer 8 of n+ conductivity type acts as the other electrode of the resistor.

The arrangement shown provides an ideal current source or load device and can be made p...