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Method to Reduce Breakdown Yield Loss in Thin Film Capacitors During Fabrication

IP.com Disclosure Number: IPCOM000045232D
Original Publication Date: 1983-Feb-01
Included in the Prior Art Database: 2005-Feb-06
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Howard, JK: AUTHOR [+3]

Abstract

A low-cost dual electrode structure is provided for use as a bottom electrode of a thin film decoupling capacitor for LSI devices. The electrode comprises a first layer of Hf or Zr and a second layer of Pd.

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Method to Reduce Breakdown Yield Loss in Thin Film Capacitors During Fabrication

A low-cost dual electrode structure is provided for use as a bottom electrode of a thin film decoupling capacitor for LSI devices. The electrode comprises a first layer of Hf or Zr and a second layer of Pd.

This bottom electrode structure is capable of withstanding 800 degrees C deposition of CVD (chemical vapor deposited) Si(3)N(4) dielectric film, and renders good conductivity and corrosion resistance. This structure is suitable for use with a dual dielectric structure consisting of a first layer of Si(3)N(4) and a second layer of Ta(2)O(5).

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