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Browse Prior Art Database

Capsule Process with HC1

IP.com Disclosure Number: IPCOM000045237D
Original Publication Date: 1983-Feb-01
Included in the Prior Art Database: 2005-Feb-06
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Conner, JH: AUTHOR [+4]

Abstract

The present process for capsule diffusion is in a quartz lined furnace, with no gas flow. This process allows the migration of metal ions, through the quartz liner, through the stagnant air space, and in to the quartz capsule. To reduce this contamination, a process was developed that surrounds the capsule with HC1 during diffusion. The HC1 interacts with the metal ions as they reach the capsule interface. This gettering chemically ties up the metal ion into a form which prevents migration. The contamination is expelled from the tube with the gaseous exhaust.

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Capsule Process with HC1

The present process for capsule diffusion is in a quartz lined furnace, with no gas flow. This process allows the migration of metal ions, through the quartz liner, through the stagnant air space, and in to the quartz capsule. To reduce this contamination, a process was developed that surrounds the capsule with HC1 during diffusion. The HC1 interacts with the metal ions as they reach the capsule interface. This gettering chemically ties up the metal ion into a form which prevents migration. The contamination is expelled from the tube with the gaseous exhaust.

When this metal contamination is introduced early in wafer processing, it may result in electrically detrimental defects. With the use of the HC1 environment, contamination defects were reduced by several orders of magnitude.

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