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Reactor Design for Selective RIE of SiO(2)

IP.com Disclosure Number: IPCOM000045339D
Original Publication Date: 1983-Mar-01
Included in the Prior Art Database: 2005-Feb-06
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

Ephrath, LM: AUTHOR

Abstract

This publication describes an improved reactor design for reactive ion etching (RIE) of contact holes. At this time, RIE is carried out in a reactor like the one shown in Fig. 1. As selective RIE of SiO(2) substrates 10 is carried out in gases that tend to polymerize on grounded surfaces, the inside walls 12 of the reactor become coated with a TEFLON like deposit. This deposit is removed at frequent intervals in an O(2) plasma. The O(2) plasma is generated by applying RF power to the substrate electrode 14. The cleaning step is time consuming because the polymer covers a large area and the etch rate of polymer is low on a grounded surface.

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Reactor Design for Selective RIE of SiO(2)

This publication describes an improved reactor design for reactive ion etching (RIE) of contact holes. At this time, RIE is carried out in a reactor like the one shown in Fig. 1. As selective RIE of SiO(2) substrates 10 is carried out in gases that tend to polymerize on grounded surfaces, the inside walls 12 of the reactor become coated with a TEFLON like deposit. This deposit is removed at frequent intervals in an O(2) plasma. The O(2) plasma is generated by applying RF power to the substrate electrode 14. The cleaning step is time consuming because the polymer covers a large area and the etch rate of polymer is low on a grounded surface.

The area over which the polymer is deposited and the time needed to remove the polymer during the cleaning step would be greatly reduced by placing a perforated case over the substrate electrode 14, as shown in Fig. 2. This perforated case would be grounded during RIE of SiO2, but it would be isolated from ground and powered during the cleaning step. This configuration has at least three advantages over that currently in use:
1. The perforated case partially confines the plasma and as a

result, polymer preferentially deposits on the inside of the

case rather than on the reactor walls outside the case.
2. The etch rate of the polymer and organic films increases with

increasing voltage. As a result, the etch rate of the

deposit during the O(2) clean greatly increases because the

polymer...