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Carbon Grid ION Source

IP.com Disclosure Number: IPCOM000045350D
Original Publication Date: 1983-Mar-01
Included in the Prior Art Database: 2005-Feb-06
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Cuomo, JJ: AUTHOR [+3]

Abstract

Carbon ion extraction grids, used with controlled ion bombardment of the grids, sputter carbon onto the sample and introduce a controllable amount of carbon into an oxide layer.

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Carbon Grid ION Source

Carbon ion extraction grids, used with controlled ion bombardment of the grids, sputter carbon onto the sample and introduce a controllable amount of carbon into an oxide layer.

Fig. 1 shows a Kaufman ion source with two carbon grids (screen grid 1 and accelerator grid 2), filament 3, anodes 4 and sample 5. This type has been used for ion-beam oxidation of metals, such as Ni, Cr, and Nb.

In order to introduce sputtered material from the accelerator grid, the accelerator grid voltage is made to be highly negative, causing ions from the source to impinge on the grid. The degree of impingement, and hence the amount of sputtered material deposited on the sample, is controlled by the magnitude and duration of the negative voltage.

Figs. 2A and 2B illustrate voltage sequences for control of the process. To introduce the desired material at the the process. To introduce the desired material at the beginning of the oxidation process, a voltage sequence, as shown in Fig. 2A, is used. During the period 6 of deposition of carbon (or other desired material), the voltage on accelerator grid 5 (Fig. 1) is negative and there is high impingement on the grid. Thereafter, during time period 7, the normal operating voltage for oxidation is present, and there is very little impingement on the grid.

To introduce the material in the body of the oxide, a sequence shown in Fig. 2B is used, with carbon sputtering during time 6' sandwiched between time 7' and time 7...