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Semiconductor Disk Memory Structure

IP.com Disclosure Number: IPCOM000045363D
Original Publication Date: 1983-Mar-01
Included in the Prior Art Database: 2005-Feb-06
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

DiMaria, DJ: AUTHOR [+3]

Abstract

In S. Iwamura et al., IEEE Trans. Elec. Dev. ED 28, 854 (1981), it was proposed to use the memory properties of metal-silicon nitride-silicon dioxide-semiconductor structures (MNOS) in a rotating disk memory.

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Semiconductor Disk Memory Structure

In S. Iwamura et al., IEEE Trans. Elec. Dev. ED 28, 854 (1981), it was proposed to use the memory properties of metal-silicon nitride-silicon dioxide- semiconductor structures (MNOS) in a rotating disk memory.

In this memory, a movable, stylus-like gate electrode is used to write/erase and read a disk of deposited silicon nitride-silicon dioxidesemiconductor layers. In these structures, a thin (approximately 25 Angstroms) layer of a good quality oxide is required to provide an insulating barrier between the silicon nitride and the semiconductor which will allow charge transfer if sufficiently large electrical fields are applied across the oxide. Fabrication advantages result if the silicon nitride and silicon dioxide layers are replaced by a single layer of siliconrich silicon dioxide, having 1-3% excess silicon. The memory properties of the device will be maintained, and the capacitance voltage (C-V) curves of a capacitor structure with siliconrich silicon dioxide will be shifted with the appropriate bias voltage. The silicon-rich silicon dioxide layer can be reduced in thickness with the voltages scaling accordingly. If a hard impermeable surface is necessary, a thin layer of silicon nitride can be deposited on the silicon rich silicon dioxide layer.

A simpler and less complicated fabrication procedure results, since the silicon-rich silicon dioxide thickness is not critical as compared to the thin thermal oxide used in conve...