Browse Prior Art Database

Heat Transfer Compound

IP.com Disclosure Number: IPCOM000045465D
Original Publication Date: 1983-Mar-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Mondou, ER: AUTHOR [+2]

Abstract

This compound is useful when placed between the backside of an integrated circuit device mounted on a substrate and the cap or heat sink. The compound significantly reduces the thermal resistance between the device and the cap or heat sink, thereby promoting better and more effective cooling of the semiconductor device.

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Heat Transfer Compound

This compound is useful when placed between the backside of an integrated circuit device mounted on a substrate and the cap or heat sink. The compound significantly reduces the thermal resistance between the device and the cap or heat sink, thereby promoting better and more effective cooling of the semiconductor device.

The heat transfer compound includes (a) a thermal filler compound preferably formed of lamellar boron nitride particles in an amount in the range of 30 to 70 percent by weight, and (b) a vehicle consisting of a poly- alpha-olefin. A wetting agent may be included to enhance wetting the surface of the boron nitride particles.

The resultant compound is cleanable, thereby making rework processes more feasible. The compound also is inert, has a high thermal conductivity, and is electrically non-conductive.

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