Browse Prior Art Database

High Frequency Active Element

IP.com Disclosure Number: IPCOM000045546D
Original Publication Date: 1983-Apr-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Price, PJ: AUTHOR

Abstract

A semiconductor device having negative differential conductance at frequencies in the terahertz range, but positive conductance and hence stability at zero frequency, is realized by means of heterolayers fabricated so that (a) they exhibit a hot-electron transferred carrier effect and (b) the layer with higher minimum carrier energy has the higher mobility. By means of molecular beam epitaxy, the transferred electron property may be obtained by making the heterolayers close together and of differing widths; and the mobility difference, by concentrating the dopant ions in or near the wide layer and/or making use of the known dependence of interface quality on growth sequence. Favorable material for the device is GaAs and (Ga,Al)As alloy.

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High Frequency Active Element

A semiconductor device having negative differential conductance at frequencies in the terahertz range, but positive conductance and hence stability at zero frequency, is realized by means of heterolayers fabricated so that (a) they exhibit a hot-electron transferred carrier effect and (b) the layer with higher minimum carrier energy has the higher mobility. By means of molecular beam epitaxy, the transferred electron property may be obtained by making the heterolayers close together and of differing widths; and the mobility difference, by concentrating the dopant ions in or near the wide layer and/or making use of the known dependence of interface quality on growth sequence. Favorable material for the device is GaAs and (Ga,Al)As alloy.

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