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Solid Diffusion Source with Textured Surface

IP.com Disclosure Number: IPCOM000045608D
Original Publication Date: 1983-Apr-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Katyl, RH: AUTHOR

Abstract

A submicron textured surface silicon wafer containg the appropriate diffusion process for making the P and N regions of silicon semiconductor devices.

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Solid Diffusion Source with Textured Surface

A submicron textured surface silicon wafer containg the appropriate diffusion process for making the P and N regions of silicon semiconductor devices.

Solar absorbers which employ a thin-film silicon with a submicron surface that is produced by a reactive ion etch process are known, for example, cf. "Textured Thin-Film Si Solar Selective Absorbers Using Reactive Ion Etching," H.
G. Craighead et al., Appl. Phys. Lett. 37(7), 653-655 (October 1, 1980). To produce the proposed textured-surface solid diffusion source, the present system would begin with a solid planar silicon member or wafer heavily doped with the appropriate kind of impurity or impurities. One or both sides of the wafer source are then reactive ion etched with a gas mixture of CCl(2)F(2), Ar, and 0O(2) in the presence of a small Al plate to produce the submicron textured surface. The microscopic columns that would be produced in the surface structure of the wafer would thereby enlarge the surface area of the wafer and hence the dopant evaporation rate available from such a wafer.

The texturing of the wafer source is readily controllable, resulting in a controlled surface area that would not be as variable as is the case of a powder diffusion source. As a consequence, when the wafer is subsequently used as a diffusion source, the parameters, e.g., sheet resistance, of the diffused layer it produces in the silicon semiconductor device would also be more uni...