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Reactive Ion Etching of Polymeric and Dielectric Materials

IP.com Disclosure Number: IPCOM000045634D
Original Publication Date: 1983-Apr-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Manzi, M: AUTHOR [+2]

Abstract

The metal deposition for multilevel metallurgy can be done through a "lift-off" resist stencil or mask. Because of several photo problems (contaminations, gel particles in spun-on-glass, poor quality which can develop in RIE (reactive ion etching) images) it becomes necessary to rework the lift-of f resist structure atop the semiconductor wafers.

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Reactive Ion Etching of Polymeric and Dielectric Materials

The metal deposition for multilevel metallurgy can be done through a "lift-off" resist stencil or mask. Because of several photo problems (contaminations, gel particles in spun-on-glass, poor quality which can develop in RIE (reactive ion etching) images) it becomes necessary to rework the lift-of f resist structure atop the semiconductor wafers.

The process for "reworking" the photoresist structure is substantially the same as that of conventional metal "lift-off" processes: Hot UP (N-methyl-2-pyrrolidone) solution

Cold UP solution

J-100 (Indust-Ri-Chem Laboratory)

Acetone rinse

Rinse in DI H(2)O

Dry

A modified barrier process has also been used instead of a spun-on-glass barrier layer. As part of the modified process, plasma enhanced silicon nitride (approx. 2K Angstoms) is deposited atop the baked and hardened resist underlay layer. A suitable layer of photoresist (Azoplate resist/terpolymer) is then spun atop the nitride layer for imaging purposes. After optical or E-beam exposure and development, wafers sometimes have to be reworked (contamination, poor image quality, etc.).

One of the problems observed is that these wafers with silicon nitride could not be completely cleaned by the standard chemical process mentioned above. This happens because of the excellent conformal coating of the plasma nitride layer.

In the modification proposed, both the polymeric (photoresist) and the dielectric barrier lay...