Browse Prior Art Database

Field Ablation Storage Device

IP.com Disclosure Number: IPCOM000045684D
Original Publication Date: 1983-Apr-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 2 page(s) / 44K

Publishing Venue

IBM

Related People

Depp, SW: AUTHOR [+3]

Abstract

An ablative storage system is described which utilizes a recording head with an emission point to record data at high recording density.

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Field Ablation Storage Device

An ablative storage system is described which utilizes a recording head with an emission point to record data at high recording density.

The read/write head is fabricated in a silicon substrate 10. An oxide film 12 is produced on the substrate and etched to leave a circular central area. The substrate is then etched, except for oxide 12, to form a short wide pedestal 14 (Fig. 1a). The oxide layer 12 is stripped, and an oxide layer 16 is produced over the entire substrate surface (Fig. 1b). The oxide layer 16 is etched to produce a doughnut shaped opening 18 surrounding central oxide element 20. The silicon substrate is then etched in an isotropic etchant which undercuts the oxide 16, 20 just to the point at which the round central oxide element 20 becomes detached from the remaining silicon point 22 (Fig. 1c). emission point (Fig. 2). The resultant device 26 comprises a very sharp silicon point 22 with radius less than 50 nm, coplanar with the rest of the head surface so that the physical wear of the point 22 is greatly diminished.

In operation, the silicon head 26 flies over a rotating disk 28 in a conventional manner, separated from disk 28 by a small distance such as 0.15 micron. The disk 28 is coated with a thin metal film 30. When a voltage is applied between sharp emitter point 22 and the thin metal film 30, a high current is drawn from point 22 by field-emission, thereby ablating a hole 32 in the thin film 30 by ohmic heating....