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Fine Line Fabrication Using Photoresist Sidewalls

IP.com Disclosure Number: IPCOM000045703D
Original Publication Date: 1983-Apr-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Speidell, JL: AUTHOR

Abstract

This article describes a process for the fabrication of submicron lines. This process offers the advantages of high reproducibility and the simultaneous production of many lines with the line dimensions (height, width and length) being easily adjusted. The line dimensions can be adjusted to yield lines with a high aspect ratio, which can then be used as X-ray or ion-implantation masks. The equipment and processing used are simple. The fabrication procedure is as follows: A positive working photoresist, such as Shipley AZ 1370, is deposited on the substrates and is prepared for use as a "liftoff" stencil. The finished photoresist structure is show in Fig. 1. The line height is determined by the distance d in Fig. 1, which can be varied by adjusting the photoresist processing parameters.

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Fine Line Fabrication Using Photoresist Sidewalls

This article describes a process for the fabrication of submicron lines. This process offers the advantages of high reproducibility and the simultaneous production of many lines with the line dimensions (height, width and length) being easily adjusted. The line dimensions can be adjusted to yield lines with a high aspect ratio, which can then be used as X-ray or ion-implantation masks. The equipment and processing used are simple. The fabrication procedure is as follows: A positive working photoresist, such as Shipley AZ 1370, is deposited on the substrates and is prepared for use as a "liftoff" stencil. The finished photoresist structure is show in Fig. 1. The line height is determined by the distance d in Fig. 1, which can be varied by adjusting the photoresist processing parameters.

An aluminum film is then evaporated onto the substrate-resist structure at an oblique angle 0, as shown in Fig. 2. The total thickness of the A1 evaporated is monitored using a crystal controlled thickness monitor. Assuming that the A1 atoms stick at the point of impact, the thickness of the A1 deposited on the photoresist sidewall is given by multiplying the thickness monitor reading by the cosine of the angle B. The thickness of A1 deposited on the horizontal surfaces of the substrate and photoresist will equal the thickness monitor reading multiplied by the sine of the angle B.

The A1 on the horizontal surfaces is removed using a...