Browse Prior Art Database

Positive Acting Current Gate

IP.com Disclosure Number: IPCOM000045721D
Original Publication Date: 1983-Apr-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Price, PJ: AUTHOR

Abstract

This article describes a field effect transistor type device employing the principles that in semiconductor conducting layers or heterolayers the mobility of the electrons therein increases with increasing electron energy and that in closely adjacent semiconductor layers with moderate doping densities mutual coulomb scattering will cause a strong energy flow from a "hot" layer to a "cold" so as to raise the effective electron temperature in the cold layer by a substantial fraction of the temperature difference, and hence increase the current in it.

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Positive Acting Current Gate

This article describes a field effect transistor type device employing the principles that in semiconductor conducting layers or heterolayers the mobility of the electrons therein increases with increasing electron energy and that in closely adjacent semiconductor layers with moderate doping densities mutual coulomb scattering will cause a strong energy flow from a "hot" layer to a "cold" so as to raise the effective electron temperature in the cold layer by a substantial fraction of the temperature difference, and hence increase the current in it.

The structure is shown in the drawing wherein separate electrodes are provided to GaAs layers of about 50 Angstroms thickness and separation.

One layer serves as a gate or current switch for the other.

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