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Method to Reduce Surface Topology on Glass Ceramic

IP.com Disclosure Number: IPCOM000045815D
Original Publication Date: 1983-Apr-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Mauer, JL: AUTHOR [+2]

Abstract

Typical glass ceramic mixtures consist of SiO(2), MgO, A1(2)0(3), and other constituents. A sample of such a glass ceramic, when etched in a CF(4) plasma (reactive ion etching) under the conditions of 50 millitorr, 300 watts, unloaded SiO(2) cathode (11" diameter), etches at a very low rate (100 Angsroms/min) which is indicative of the low etch rates for MgO and A1(2)O(3). The original surface of the glass ceramic has a very smooth main surface but random irregular grains which can measure as high as 10 mm. This same surface after etching in a CF plasma no longer exhibited the large irregular grains, indicating that these grains were predominately SiO(2).

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Method to Reduce Surface Topology on Glass Ceramic

Typical glass ceramic mixtures consist of SiO(2), MgO, A1(2)0(3), and other constituents. A sample of such a glass ceramic, when etched in a CF(4) plasma (reactive ion etching) under the conditions of 50 millitorr, 300 watts, unloaded SiO(2) cathode (11" diameter), etches at a very low rate (100 Angsroms/min) which is indicative of the low etch rates for MgO and A1(2)O(3). The original surface of the glass ceramic has a very smooth main surface but random irregular grains which can measure as high as 10 mm. This same surface after etching in a CF plasma no longer exhibited the large irregular grains, indicating that these grains were predominately SiO(2).

The above plasma etch or any reactive ion etch/plasma etch which etches SiO(2) is useful as a final polish for glass ceramic material. The main body of the substrate etches very slowly, while the irregular surface topology etches much more rapidly.

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