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Patterned Subcollector Process with no Subcollector Reox

IP.com Disclosure Number: IPCOM000045823D
Original Publication Date: 1983-Apr-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 2 page(s) / 54K

Publishing Venue

IBM

Related People

Dockerty, RC: AUTHOR

Abstract

The following bipolar process results in subcollector and isolation regions that are self-registered. In addition, there is no need to oxidize the subcollector area in order to define a step in the silicon.

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Patterned Subcollector Process with no Subcollector Reox

The following bipolar process results in subcollector and isolation regions that are self-registered. In addition, there is no need to oxidize the subcollector area in order to define a step in the silicon.

Referring to Fig. 1, the process is as follows:
1. Thermally oxidize p- substrate 10 to form silicon dioxide

I(OI)
2. Deposit silicon nitride I (NI)
3. Chemically deposit silicon dioxide lI (OII)
4. Apply and pattern photoresist layer I (PRI). The openings

in PRI define subcollector (SC) and isolation regions.

Referring to Fig. 2:
5. Etch OII
6. Strip PRI
7. Apply and pattern PRII
8. Etch NI and OI in isolation windows
9. Strip PRII
10. Do a BBr(3) diffusion and oxidation - grow 5000 Angstroms

SiO(2)
11. Etch silicon oxynitride
12. Etch NI and OI from subcollector window
13. Diffuse subcollector and drive-in
14. Etch all remaining oxide and nitride - see Fig. 3
15. Grow epi.

This process can easily be modified to use an ion-implanted isolation region and/or subcollector region.

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