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Reactive Ion Etching of Copper

IP.com Disclosure Number: IPCOM000045943D
Original Publication Date: 1983-May-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Cuomo, JJ: AUTHOR [+2]

Abstract

Using heated copper and the proper choice of masking material, selective etching of copper is achieved in an I/2/ plasma.

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Reactive Ion Etching of Copper

Using heated copper and the proper choice of masking material, selective etching of copper is achieved in an I/2/ plasma.

Copper is difficult to etch due to the low vapor pressure of the reaction products formed from the etchants normally used. As circuitization decreased in dimensions, anisotropic etchant for copper are desired.

In the figure, cathode l and anode 2 are provided with a potential of about 300 volts, which provides a plasma of both positive and negative ions (I/+/2 /and I/-//2/ which removes copper layer 3 portions unprotected by the titanium pattern 4 on the surface. The substrate is at 500OEC and is mounted on the cathode. Applied power is about 15 watts.

The plasma produces I/2 /bombardment of the copper surfaces, which react to produce copper iodide which is removed by both ion-stimulated and thermal disorption.

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