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Control of Plasma-Enhanced Deposition of Thin Films in Multi-Station Inline Deposition Tool

IP.com Disclosure Number: IPCOM000046010D
Original Publication Date: 1983-May-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Courchaine, RJ: AUTHOR

Abstract

This technique provides for accurate control of thin film thickness and refractive index in a multi-station inline plasma deposition tool by providing a fixture enabling the deposition head-to-wafer distance to be individually adjusted.

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Control of Plasma-Enhanced Deposition of Thin Films in Multi-Station Inline Deposition Tool

This technique provides for accurate control of thin film thickness and refractive index in a multi-station inline plasma deposition tool by providing a fixture enabling the deposition head-to-wafer distance to be individually adjusted.

Plasma deposition of silicon nitride passivation films is performed in an inline deposition tool including five different deposition heads spaced from a track upon which semiconductor wafers move through the tool. Wafers are moved sequentially under each head to provide the required film thickness. Characteristics of deposited films have been found to be a critical function of deposition head-to-wafer distance. Deposition heads are similar to "shower heads" and are mounted by means of a threaded hollow stem.

Improved control of head-to-wafer distance is obtained when an adjusting fixture and locking nut are provided between the stem and its original mounting nut. By loosening the locking nut, the head can be adjusted up or down by turning the adjusting fixture. Adjustment of each head independently improves control of deposited film thickness and refractive index.

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