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ELECTROCHEMICAL DETECTION OF SiO/2/ CRACKS IN WAFERS OR CHIPS

IP.com Disclosure Number: IPCOM000046057D
Original Publication Date: 1983-May-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Hopper, GS: AUTHOR [+2]

Abstract

The probe used for detecting silicon dioxide (SiO/2/) cracks in wafers or chips is essentially an electrochemical pen. The pen, which has a felt tip, makes contact with the SiO/2/ surface of either a chip or a wafer and detects cracks in the SiO/2/ by generating a potential between the electrolyte in the pen and the aluminum layer underneath the SiO/2/ surface.

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ELECTROCHEMICAL DETECTION OF SiO/2/ CRACKS IN WAFERS OR CHIPS

The probe used for detecting silicon dioxide (SiO/2/) cracks in wafers or chips is essentially an electrochemical pen. The pen, which has a felt tip, makes contact with the SiO/2/ surface of either a chip or a wafer and detects cracks in the SiO/2/ by generating a potential between the electrolyte in the pen and the aluminum layer underneath the SiO/2/ surface.

The pen contains an absorbing medium (cotton pad) which is saturated with an electrolyte, which may be, for example, 0.3-1.5 molar potassium hydrogen phosphate (K/2/ H PO/4/). A gold wire runs from the top of the felt tip inside the pen alongside of the saturated absorbing medium to the top of the pen and is connected to the voltmeter. The wafer or chip (backside down) is in contact with a grounding plate that is connected to the other terminal of the voltmeter.

As the pen moves along the wafer, a potential will be generated only if there is a crack in the surface of the SiO/2/.

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