Browse Prior Art Database

Method of Selectively Producing Very Thin Oxide or Nitride Layers on Silicon Substrates

IP.com Disclosure Number: IPCOM000046059D
Original Publication Date: 1983-May-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Bayer, T: AUTHOR [+4]

Abstract

The production of very thin oxide or nitride layers by ion-implanting oxygen or nitrogen into silicon can be improved by additionally implanting noble gas ion, thus influencing the sputter rate and the stoichiometry of the generated layers.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 69% of the total text.

Page 1 of 2

Method of Selectively Producing Very Thin Oxide or Nitride Layers on Silicon Substrates

The production of very thin oxide or nitride layers by ion-implanting oxygen or nitrogen into silicon can be improved by additionally implanting noble gas ion, thus influencing the sputter rate and the stoichiometry of the generated layers.

After a certain oxygen implantation time has elapsed, a constant oxygen concentration C(O) and thus a certain stoichiometry is obtained in the Si monocrystal. The stoichiometry depends only on the sputter yield S(O)/+/ which equals the number of Si atoms knocked out by each implanted oxygen ion. The stoichiometry of the oxygen in the Si monocrystal can be influenced by additional noble gas (argon, krypton, xenon) ion implantation.

In the case of additional argon implantation, the constant oxygen concentration is obtained in accordance with the following equation

(Image Omitted)

where N is the number of Si crystal atoms per cm/3/, j(O/+/) is the oxygen ion current density in the ion beam, j(Ar/+/) is the argon ion current density in the ion beam, and j(Si) is the current density of the knocked out-Si atoms or ions.

The equation shows that the oxygen concentration C(O) can be varied over a wide range by several parameters, such as j(O/+/), j(Ar/+/) and S(Ar/+/) (the latter being influenced by the energy of implantation E and the ion implantation angle O By a suitable choice of parameters, the depth of the surface region affected by the noble...