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Improved Photoresist Plasma Etch Characteristics

IP.com Disclosure Number: IPCOM000046073D
Original Publication Date: 1983-May-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Gardner, TR: AUTHOR

Abstract

An important consideration in a plasma etching process is the degree of selectivity between the photoresist and the material to be etched. When a positive-type resist is used in an oxygen plasma, the selectivity is sometimes inadequate.

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Improved Photoresist Plasma Etch Characteristics

An important consideration in a plasma etching process is the degree of selectivity between the photoresist and the material to be etched. When a positive-type resist is used in an oxygen plasma, the selectivity is sometimes inadequate.

By soaking the resist in an alkaline potassium permanganate solution, great improvements in selectivity can be achieved. The treated resist is removed at a much slower rate than the untreated resist.

Rinsing the resist in an oxalic acid solution returns the resist to its pre-treated state, at which time it can be removed in an oxygen plasma chamber in a conventional fashion.

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