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METHOD OF REDUCING DEFECT REGIONS OF ULTRA-THIN SiO2 INSULATORS

IP.com Disclosure Number: IPCOM000046214D
Original Publication Date: 1983-Jun-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 2 page(s) / 35K

Publishing Venue

IBM

Related People

Igoe, JT: AUTHOR [+2]

Abstract

During the manufacture of semiconductor devices, defects occur in the silicon dioxide (SiO2) insulations leading to yield loss or loss of reliability. The defects of interest are those causing a reduction in silicon dioxide thickness. They are usually caused by pinholes, contamination or poor SiO2 coverage of protrusions.

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METHOD OF REDUCING DEFECT REGIONS OF ULTRA-THIN SiO2 INSULATORS

During the manufacture of semiconductor devices, defects occur in the silicon dioxide (SiO2) insulations leading to yield loss or loss of reliability. The defects of interest are those causing a reduction in silicon dioxide thickness. They are usually caused by pinholes, contamination or poor SiO2 coverage of protrusions.

Most of these defects lead directly to a short or yield loss, but in many cases it appears that a thin native silicon dioxide forms in the defect which is not easily detectable. The remaining film or silicon dioxide thickness will most likely be in the 0-10 nanometer thickness range.

The use of circuit metallurgy which has a component that will reduce the thin layers of silicon dioxide during deposition or during a subsequent heat treatment process will overcome these problems. One such metallurgy would include a titanium layer 10 over the insulator layer 11 which insulates the first and second conductor layers 12 and 13, which may be, for example, chromium/aluminum/copper and aluminum/copper respectively, as shown in the figure.

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