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Process for Fabricating Submicron Structures

IP.com Disclosure Number: IPCOM000046233D
Original Publication Date: 1983-Jun-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Daetwyler, K: AUTHOR [+4]

Abstract

Lateral reactive ion etching (RIE) of an overhang resist profile is used to define submicron dimensions, without submicron lithography being required.

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Process for Fabricating Submicron Structures

Lateral reactive ion etching (RIE) of an overhang resist profile is used to define submicron dimensions, without submicron lithography being required.

Fig. 1A shows a thin layer 3 of, for example, SiO2, deposited on a layer 2 of other material, for example, a metal. Layer 2 is supported by a substrate l which may also be SiO2 . An opening, having accurately controlled dimensions, is to be generated in layer 3. For this purpose, a thick resist layer 4 is deposited in a first step (Fig. 1A) on layer 3, so that an edge is formed which protrudes the base of layer 3 by approximately 1 micrometer. The overhang profile can be generated in several ways, for example, by overexposing an electron beam resist or by resist soaking. If an edge is to be formed in the metal layer, a first (optional) RIE etch step is performed (Fig. 1B).

In a further process step (Fig. 1C), the resist is back-etched by RIE with O2, to define a strip of approximately 200 nm not covered by the protruding edge. A layer 5 of, for example, MgO, acting as an etch mask (Fig. 1D), is deposited on this structure. The critical dimension to be controlled (D in Fig. 1D) extends from the etch mask to the bottom of the overhang profile and can be accurately defined by laterally etching the resist from its original boundary (dotted line). This lateral etching is performed by RIE in an O2 atmosphere and can be very accurately controlled by adjusting the process parame...