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DETECTION OF SiO2 CRACKS WITH CAPACITANCE MEASUREMENTS

IP.com Disclosure Number: IPCOM000046404D
Original Publication Date: 1983-Jul-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Hopper, GS: AUTHOR [+3]

Abstract

Quartz defects between levels of metallization can be detected via capacitance measurements. When quartz is sputtered over a metal layer, processing conditions occasionally stress the SiO2 and cause it to crack. These micro-cracks expose aluminum from the metal underlayer and cause the formation of Al2O3 (aluminum oxide).

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DETECTION OF SiO2 CRACKS WITH CAPACITANCE MEASUREMENTS

Quartz defects between levels of metallization can be detected via capacitance measurements. When quartz is sputtered over a metal layer, processing conditions occasionally stress the SiO2 and cause it to crack. These micro-cracks expose aluminum from the metal underlayer and cause the formation of Al2O3 (aluminum oxide).

The resulting change in the dielectric medium and, hence, the capacitance of the structure can be used to determine whether or not the SiO2 layer is defective.

The cell used is a glass ball-joint type and is filled with KCl electrolyte (0.1- 1.0 m The wafer to be tested lies at the bottom of the cell and is connected to a capacitance bridge while the platinum electrode is connected to the other terminal of the bridge.

Typical measurements of "good" wafers with no cracks are in the range of 4000-5000 pF, while wafers with cracks or scratches have capacitance measurements in the range of 3000-3500 pF.

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