Browse Prior Art Database

Control of Resist-Hardening Process in a Barrel Plasma Etcher System

IP.com Disclosure Number: IPCOM000046414D
Original Publication Date: 1983-Jul-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 2 page(s) / 51K

Publishing Venue

IBM

Related People

Martinet, F: AUTHOR

Abstract

One of the major problems recognized today with barrel plasma etcher reactors is the run to run reproducibility during the resist-hardening process. The process may be significantly improved by: 1) Aluminum Faraday cage DC bias voltage and 2) Monitoring and controlling the UV emission spectroscopy.

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Control of Resist-Hardening Process in a Barrel Plasma Etcher System

One of the major problems recognized today with barrel plasma etcher reactors is the run to run reproducibility during the resist-hardening process. The process may be significantly improved by: 1) Aluminum Faraday cage DC bias voltage and 2) Monitoring and controlling the UV emission spectroscopy.

The resist-hardening process is currently used to increase resist adhesion during dry etching and wet etching processes to improve resist flow resistance during heat treatment, ion implantation and post bake steps and, lastly, to improve resist erosion resistance during the dry etching process.

Because the hardening process is in essence a UV photochemical reaction, although very dependent on ion bombardment, it appears that to get good resist hardening, the following different mechanisms are to be considered: - UV illumination, - gas phase with fluorine, and

- ion bombardment.

In barrel plasma reactors, for determined gas compositions, the cage-DC bias voltages are easily measured with a probe and the resulting signal is recorded on a chart recorder for subsequent visual monitoring.

On the other hand, the UV intensity provided by the plasma glow discharge is analyzed and also recorded after having been filtered on a chart recorder, and then displayed by optical emission spectroscopy.

During the short time required for the hardening process of the the positive photoresist patterns, this improved syste...