Browse Prior Art Database

Structuring a Photoresist Layer by Reactive Ion Etching

IP.com Disclosure Number: IPCOM000046430D
Original Publication Date: 1983-Jul-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 2 page(s) / 42K

Publishing Venue

IBM

Related People

Asch, K: AUTHOR [+5]

Abstract

A silicon nitride-coated silicon thin-film mask with through-holes is used to selectively ion etch a photoresist layer in an oxygen plasma

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Structuring a Photoresist Layer by Reactive Ion Etching

A silicon nitride-coated silicon thin-film mask with through-holes is used to selectively ion etch a photoresist layer in an oxygen plasma

The silicon mask 1 comprises a silicon wafer 2 with tub-shaped cavities 3, in whose area silicon wafer 2 consists only of a thin P doped silicon membrane 4, into which a pattern of through-holes 5, corresponding to the pattern to be transferred, is etched. This mask is described in European Patent Application 0019779. An Si3N4 coating 6 makes mask 1 resistant to the oxygen plasma.

Mask 1, with its surface opposite to that with cavities 3, is placed on photoresist layer 7 to be structured, which is applied to a substrate 8. Mask 1 is kept at a predetermined distance from photoresist layer 7 by spacers 9. Substrate 8 together with the overlying mask 1 is placed on a cathode 10 of a plasma reactor, with the mask facing the plasma 11. As reactive ion etching is directional, the thickness of photoresist layer 7 is optional.

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